Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

TL;DR

This paper demonstrates that magnetic proximity effect can induce long-range ferromagnetism at room temperature in topological insulators, enabling new pathways for spintronic device applications.

Contribution

It introduces a method to induce room-temperature ferromagnetism in topological insulators via magnetic proximity effect using an Fe overlayer, overcoming limitations of magnetic doping.

Findings

Long-range ferromagnetism achieved at ambient temperature.

Magnetic proximity effect enables interface-controlled ferromagnetism.

Potential for spintronic applications in topological insulators.

Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.