High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

TL;DR

This paper presents a method for high-yield production and transfer of large graphene flakes on glass via anodic bonding, achieving high-quality, minimally damaged graphene suitable for electronic applications.

Contribution

It introduces a novel anodic bonding technique for producing and transferring large graphene flakes with high yield and quality, enabling scalable graphene device fabrication.

Findings

Produced tens of large graphene flakes with minimal defects.

Transferred flakes maintain high charge mobility (~6000 cm^2/V s).

Transfer process does not damage graphene or increase doping.

Abstract

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 {\mu}m and few tens of flakes with larger size. 60-70% of the flakes have negligible D peak. We show that it is possible to easily transfer the flakes by wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is of the order of 6000 cm^2/V s (at carrier concentration of 10^12 cm^-2), which is typical for devices prepared on this substrate with exfoliated graphene.