Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device
Christophe Krzeminski (IEMN-ISEN), Emmanuel Dubois (IEMN), Xiaohui, Tang (UCL), Nicolas Reckinger (UCL), Andr\'e Crahay (UCL), Vincent Bayot, (UCL)
TL;DR
This paper uses process simulation to optimize and understand the fabrication of an alternative nano-flash memory device, focusing on parameters affecting dot storage formation.
Contribution
It introduces a simulation-based approach to optimize fabrication parameters and deepen understanding of dot storage in a novel nano-flash memory device.
Findings
Oxidation temperature significantly affects dot formation.
Nanowire shape influences storage capacity.
Simulation results guide fabrication optimization.
Abstract
Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
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Taxonomy
TopicsChemical and Physical Properties of Materials · Transition Metal Oxide Nanomaterials · Semiconductor materials and devices