Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

TL;DR

This paper reports the fabrication of self-aligned single-dot memory devices with room-temperature single-electron operation, emphasizing process repeatability, uniformity, scalability, and industrial transferability.

Contribution

It introduces a novel fabrication method for single-dot memory devices that operate at room temperature with high uniformity and potential for industrial application.

Findings

Device has a floating gate of 5-10 nm.

Single-electron memory operation achieved at room temperature.

High process repeatability and device uniformity demonstrated.

Abstract

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.