Spin Accumulation Encoded in Electronic Noise for Mesoscopic Billiards with Finite Tunneling Rates

TL;DR

This paper investigates how spin accumulation affects electronic noise in mesoscopic quantum dots with finite tunneling, revealing that spin distribution changes significantly influence noise behavior under certain conditions.

Contribution

It introduces a theoretical framework to analyze spin-dependent noise in quantum dots with non-ideal tunneling and reflection, extending understanding of spin effects in mesoscopic transport.

Findings

Spin accumulation alters noise power in quantum dots.

Significant noise behavior changes occur at low tunneling rates.

Strong reflection enhances the impact of spin distribution on noise.

Abstract

We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculation focus on the current-current correlation function for the flux of electrons injected into the quantum dot. The linear response theory used allows to obtain the noise power in the regime of thermal crossover as a function of parameters that reveal the spin polarization at the reservoirs. The calculation is performed employing diagrammatic integration within the universal groups (ensembles of Dyson) for a non-ideal, non-equilibrium chaotic quantum dot. We show that changes in the spin distribution determines significant alteration in noise behavior at values of the tunneling rates close to zero, in the regime of strong reflection at the gates.