Balanced ternary addition using a gated silicon nanowire
J.A. Mol, J. van der Heijden, J. Verduijn, M. Klein, F. Remacle, S., Rogge

TL;DR
This paper demonstrates a proof of principle for a ternary adder using silicon single electron transistors, enabling inherently ternary operations with potential applications in low-power computing.
Contribution
It introduces a novel ternary addition method using silicon nanowire SETs, showcasing their capability for complex ternary logic operations.
Findings
Successful demonstration of ternary addition with silicon SETs
Robust three-valued output based on gate-dependent rectification
Potential for low-power, ternary logic circuits
Abstract
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Mapping logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform complex, inherently ternary operations, on a single transistor.
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