Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

TL;DR

This study investigates the growth and electrical properties of Bi2Se3 nanostructures synthesized by metalorganic chemical vapor deposition, revealing their structural characteristics and quantum transport phenomena at low temperatures.

Contribution

First detailed characterization of Bi2Se3 nanostructures grown by MOCVD, including their structural, electrical, and quantum interference properties.

Findings

Achieved growth of single-crystalline ribbons and platelets with controlled morphology.

Measured resistivity of 4 mOhm-cm at low temperature.

Observed weak anti-localization indicating strong spin-orbit coupling.

Abstract

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.