Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

TL;DR

This paper theoretically investigates tunneling currents in doped graphene junctions, highlighting a resonant peak at Dirac point alignment and discussing device implications, alignment effects, and material quality.

Contribution

It provides a theoretical analysis of single-particle tunneling in doped graphene junctions, including the resonant current peak and factors affecting it.

Findings

Large resonant current peak at Dirac point alignment

Magnitude and width of the peak are computed

Influence of electrode alignment and structural quality discussed

Abstract

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak is computed, and its use for devices is discussed. The influence of both rotational alignment of the graphene electrodes and structural perfection of the graphene is discussed.