Non-volatile Complementary Resistive Switch-based Content Addressable Memory

TL;DR

This paper introduces a new resistive memory cell design using Complementary Resistive Switches for non-volatile content addressable memory, enabling efficient logic-to-ON state transitions.

Contribution

It presents a novel CRS-based B/TCAM cell architecture that leverages a logic to ON state transition for improved memory functionality.

Findings

Proposes a resistive-only B/TCAM cell with CRS

Utilizes a logic to ON state transition for operation

Enables non-volatile memory applications

Abstract

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application.