Impedance of the single electron transistor at radio-frequencies

TL;DR

This paper experimentally measures the impedance of a single electron transistor at radio frequencies, revealing resistive and reactive components and their dependence on bias and tunnel rate, with results matching a master equation model.

Contribution

It provides the first detailed experimental characterization of SET impedance at RF frequencies with gate excitation, including resistive and reactive components.

Findings

Identification of Sisyphus resistance and tunnelling capacitance in SET impedance

Bias dependence of complex impedance studied at high tunnel rates

Experimental data aligns with theoretical master equation calculations

Abstract

We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias the single electron transistor displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared to values calculated from a master equation model.