Control of rectifying and resistive switching behavior in BiFeO3 thin films

TL;DR

This study demonstrates how tuning oxygen pressure during pulsed laser deposition enhances resistive switching in BiFeO3 thin films, achieving high switching ratios and stable long-term retention for potential memory applications.

Contribution

It reveals the influence of oxygen vacancy concentration on resistive switching and rectifying behavior in BiFeO3 films, providing a method to optimize device performance.

Findings

Achieved a switching ratio of ~4500.

Controlled oxygen vacancies to improve switching behavior.

Demonstrated homogeneous switching with long-term retention.

Abstract

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.