New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements
Dong Sun, Grant Aivazian, Aaron M. Jones, Wang Yao, David Cobden,, Xiaodong Xu

TL;DR
This study uses ultrafast optical measurements to explore hot carrier dynamics in graphene pn junctions, revealing their dominant role in photocurrent generation and implications for ultrafast optoelectronic devices.
Contribution
It provides new insights into hot carrier contributions and impact ionization effects in graphene, advancing understanding of non-equilibrium electron dynamics at ultrafast timescales.
Findings
Photocurrent response time of ~1.5 ps at room temperature
Hot carriers dominate energy transport at high frequencies
Multiple polarity-reversals indicate impact ionization
Abstract
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each…
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Taxonomy
TopicsGraphene research and applications · Nanowire Synthesis and Applications · Quantum Information and Cryptography
