High Q electromechanics with InAs nanowire quantum dots

TL;DR

This paper investigates the electromechanical coupling in suspended InAs nanowire resonators, revealing strong electron-mechanical interactions, Fano resonances, and high quality factors at low temperatures, advancing quantum nanomechanics research.

Contribution

It demonstrates strong electron-mechanical coupling and Fano resonances in InAs nanowire resonators with high quality factors at millikelvin temperatures.

Findings

Electron tunneling rate is about ten times the resonant frequency.

Fano resonance observed in conductance due to interference effects.

Quality factor of the resonator is approximately 10^5 at 100 mK.

Abstract

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices is observed $\sim10^5$ at 100 mK.