Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

TL;DR

This paper explores the use of dual material gates in nanoscale TFETs to enhance performance metrics like on-current, off-current, and subthreshold slope, demonstrating broad applicability across various device configurations.

Contribution

It introduces a dual material gate design for TFETs that improves multiple performance parameters and shows its effectiveness across different device materials and structures.

Findings

Significant improvement in device performance with DMG in TFETs.

Enhanced subthreshold slope and reduced DIBL effects.

Broad applicability of DMG technique across various device configurations.

Abstract

In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average subthreshold slope, the nature of the output characteristics and the immunity against the DIBL effects. We demonstrate that if appropriate work-functions are chosen for the gate materials on the source side and the drain side, the tunnel field effect transistor shows a significantly improved performance. We apply the technique of DMG in a Strained Double Gate Tunnel Field Effect Transistor with a high-k gate dielectric to show an overall improvement in the characteristics of the device along with achieving a good on-current and an excellent average subthreshold slope. The results show that the DMG technique can be applied to TFETs with different channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses and power supply levels to achieve significant gains in the overall device characteristics.