Spin Transport and Relaxation in Graphene
Wei Han, K. M. McCreary, K. Pi, W. H. Wang, Yan Li, H. Wen, J. R., Chen, R. K. Kawakami

TL;DR
This paper reviews recent advances in understanding spin injection, transport, and relaxation in graphene, highlighting the effects of contact types, doping, and temperature on spin lifetimes and mechanisms.
Contribution
It presents new experimental findings on how tunneling contacts significantly enhance spin injection efficiency and extend spin lifetimes in graphene.
Findings
Tunneling contacts increase nonlocal MR by ~1000 times.
Spin lifetimes reach up to 6.2 ns at low temperatures in bilayer graphene.
Different spin relaxation mechanisms dominate in SLG and BLG at low temperatures.
Abstract
We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ~1000 and the spin injection/detection efficiency was greatly enhanced from ~1% (transparent contacts) to ~30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes on the order of 100 ps, impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the…
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Taxonomy
TopicsGraphene research and applications · Molecular Junctions and Nanostructures · Carbon Nanotubes in Composites
