Simulation of High Conversion Efficiency and Open-circuit Voltages Of {\alpha}-si/poly-silicon Solar Cell

TL;DR

This study uses simulation to explore a P+ α-Si / N+ polycrystalline solar cell, achieving high open-circuit voltage and efficiency, and analyzes how material parameters affect performance.

Contribution

It introduces a simulation-based analysis of a novel high-efficiency poly-silicon solar cell with optimized parameters for improved performance.

Findings

Open-circuit voltage reaches 752 mV.

Conversion efficiency reaches 9.44%.

N+ poly-silicon thickness has minimal impact.

Abstract

The P+ {\alpha}-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 {\mu}m to 300 {\mu}m. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ {\alpha}-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ {\alpha}-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.