Distribution of Localized States from Fine Analysis of Electron Spin Resonance Spectra in Organic Transistors

TL;DR

This paper introduces a new ESR spectral analysis method to determine the distribution of localized trap states in organic transistors, revealing detailed spatial extents of trapped carriers at low temperatures.

Contribution

The authors developed a novel spectral analysis technique to quantify the distribution of localized states in organic transistors, validated at low temperatures.

Findings

All carriers are localized below 50 K.

Major trap states span 1.5 to 5 molecules.

Continuous distribution of states extends from 6 to 20 molecules.

Abstract

We developed a novel method for obtaining the distribution of trapped carriers over their degree of localization in organic transistors, based on the fine analysis of electron spin resonance spectra at low enough temperatures where all carriers are localized. To apply the method to pentacene thin-film transistors, we proved through continuous wave saturation experiments that all carriers are localized at below 50 K. We analyzed the spectra at 20 K and found that the major groups of traps comprise localized states having wave functions spanning around 1.5 and 5 molecules and a continuous distribution of states with spatial extent in the range between 6 and 20 molecules.