Effect of Electric Field on the Band Structure of Graphene/BN and BN/BN Bilayers

TL;DR

This study investigates how electric fields influence the electronic band structures of graphene/BN and BN/BN bilayers, revealing significant modulation of their band gaps through density functional theory calculations.

Contribution

It provides new insights into the electric field effects on bilayer band gaps, highlighting differences between graphene/BN and BN/BN systems.

Findings

Graphene/BN bilayer band gap increases with electric field.

BN/BN bilayer band gap decreases with electric field.

Charge redistribution under electric field affects band structure.

Abstract

Effect of electric field on the band structures of graphene/BN and BN/BN bilayers is investigated within the framework of density functional theory. A relatively large degree of modulation is predicted for the graphene/BN bilayer. The calculated band gap of the graphene/BN bilayer increases with applied electric field, which is not the case of BN/BN bilayer; its band gap decreases with the applied field. Both features in the bilayers considered appear to be related to the nature of the conduction band and the redistribution of the electronic charge of the bilayer systems under the influence of electric field