Nonequilibrium Quasiparticle Relaxation Dynamics in Single Crystals of Hole and Electron doped BaFe$_2$As$_2$
Darius H Torchinsky, James W. McIver, David Hsieh, G.F. Chen, J.L., Luo, N. L. Wang, Nuh Gedik

TL;DR
This study investigates the nonequilibrium quasiparticle relaxation in hole and electron doped BaFe$_2$As$_2$ using ultrafast spectroscopy, revealing distinct recombination processes and their dependence on doping, temperature, and excitation density.
Contribution
It provides new insights into quasiparticle dynamics in doped BaFe$_2$As$_2$, highlighting the different relaxation mechanisms in hole and electron doped samples and their relation to band structure.
Findings
Two relaxation processes in hole-doped samples: fast and slow components.
Recombination rates depend on temperature and excitation density.
Quasiparticle dynamics differ with doping and band structure modifications.
Abstract
We report on the nonequilibrium quasiparticle dynamics in BaFeAs on both the hole doped (BaKFeAs) and electron doped (BaFeCoAs) sides of the phase diagram using ultrafast pump-probe spectroscopy. Below , measurements conducted at low photoinjected quasiparticle densities in the optimally and overdoped BaKFeAs samples reveal two distinct relaxation processes: a fast component whose decay rate increases linearly with excitation density and a slow component with an excitation density independent decay rate. We argue that these two processes reflect the recombination of quasiparticles in the two hole bands through intraband and interband processes. We also find that the thermal recombination rate of quasiparticles increases quadratically with temperature in these samples. The temperature and excitation density dependence…
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