Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications

TL;DR

This paper demonstrates that randomly oriented core-shell silicon nanowires with graded index structures achieve broadband and wide-angle antireflection properties, enhancing photovoltaic efficiency across the solar spectrum and incident angles.

Contribution

It introduces a novel design of core-shell silicon nanowires with graded index structures for broadband and wide-angle antireflection in photovoltaic applications.

Findings

Achieves broadband antireflection from 400nm to 900nm.

Provides wide-angle antireflection from normal incidence to 60°.

Potential for improved photovoltaic device performance.

Abstract

Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60\degree) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.