Graphene: Piecing it together

TL;DR

Graphene's unique electronic properties make it highly promising for future electronics, but challenges in scalable, defect-free synthesis and atomic-level processing must be addressed to realize its full potential.

Contribution

This paper reviews the electronic properties of graphene and critically analyzes current synthesis methods, highlighting their limitations for electronic applications.

Findings

Graphene exhibits half-integer quantum Hall effect.

Current synthesis methods face challenges in producing defect-free, large-area graphene.

Atomic precision in patterning graphene is essential for electronic device integration.

Abstract

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.