Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires
Lei Fang, Xianwei Zhao, Yi-Hsin Chiu, Dongkyun Ko, Kongara M. Reddy,, Nitin P. Padture, Fengyuan Yang, Ezekiel Johnston-Halperin

TL;DR
This paper demonstrates how dielectric matching with conformal coatings can effectively control and reduce the photoluminescence polarization anisotropy in various semiconducting nanowire ensembles, advancing optical device applications.
Contribution
It introduces a comprehensive method using dielectric matching to precisely control polarization anisotropy in diverse nanowire materials.
Findings
Dielectric matching reduces polarization anisotropy by over 80%.
Method works across different materials and bandgap types.
Enables improved control for optical applications.
Abstract
The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4.0:4.41 for InP and ZnO, respectively). After dielectric matching, the polarization anisotropy of the nanowire ensembles is reduced by 86% for InP:Ta2O5 and 84% for ZnO:Ta2O5.
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