A Monte Carlo study of the fluctuations in Xe electroluminescence yield: pure Xe vs Xe doped with CH4 or CF4 and planar vs cylindrical geometries
J. Escada, T.H.V.T. Dias, F.P. Santos, P.J.B.M. Rachinhas, C.A.N., Conde, A.D. Stauffer

TL;DR
This study uses Monte Carlo simulations to compare fluctuations in electroluminescence yield in pure and doped xenon gases, revealing effects of molecular additives and geometry on detector performance.
Contribution
It provides new insights into how molecular doping and detector geometry influence electroluminescence fluctuations in xenon-based gas detectors.
Findings
CF4 causes strong electron attachment, making it unsuitable as an additive.
CH4 reduces fluctuations with minimal impact on electroluminescence yield.
Cylindrical geometry exhibits higher fluctuations than planar geometry.
Abstract
Monte Carlo simulation is used to investigate the fluctuations in the Xe proportional electroluminescence (EL) yield H (also known as secondary scintillation) produced by sub-ionization primary electrons drifting in the gas under appropriate electric fields, comparing pure Xe gas with Xe doped with CH4 or CF4. The work is modeled on gas detectors of the gas proportional-scintillation type, where amplification is achieved through the production of EL under a charge-multiplication free regime. The addition of the molecular gases to Xe reduces electron diffusion, a desirable effect in large size detectors where primary electrons drift across a long absorption/drift region. However, the presence of the molecules reduces H and increases its fluctuations. In the case of CF4, the effects are very strong due to significant electron attachment in the EL field range, ruling out CF4 as an…
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