ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution

TL;DR

This study explores how growth temperature affects the uniformity of cobalt distribution in ZnCoO thin films produced by Atomic Layer Deposition, focusing on structural, electrical, and magnetic properties.

Contribution

It demonstrates that using specific organic precursors enables growth of uniform ZnCoO films at lower temperatures, improving cobalt distribution.

Findings

Uniform films achieved at 300°C or below

Cobalt distribution is more homogeneous at lower growth temperatures

Structural, electrical, and magnetic properties are optimized at reduced temperatures

Abstract

We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.