Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO
M. Godlewski, A. Wojcik-Glodowska, E. Guziewicz, S. Yatsunenko, A., Zakrzewski, Y. Dumont, E. Chikoidze, M.R. Phillips
TL;DR
This paper investigates the optical properties of manganese-doped ZnS and ZnO layers, revealing a double valence state of Mn ions and discussing the mechanisms behind their optical behavior and emission deactivation.
Contribution
It provides a comparative analysis of ZnMnO and ZnMnS layers grown by different methods, highlighting the Mn valence states and their impact on optical properties.
Findings
Presence of double valence Mn ions in ZnO lattice
Strong absorption onset at about 2.1 eV related to Mn ion photoionization
Discussion of emission deactivation mechanisms in ZnMnO
Abstract
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.
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