Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

TL;DR

This paper investigates charge transfer mechanisms in hydrogen-intercalated epitaxial graphene on SiC, analyzing magneto-oscillations to determine acceptor models and charge responsivity, advancing understanding of doping effects.

Contribution

It introduces a method to distinguish acceptor models in graphene via magneto-oscillation analysis and quantifies charge responsivity to gate voltage.

Findings

High hole densities explained by acceptor models

Magneto-oscillations used to identify the relevant acceptor model

Quantified charge responsivity to gate voltage

Abstract

We study the charge transfer between a quasi-free-standing monolayer graphene, produced by hydrogen intercalation, and surface acceptor states. We consider two models of acceptor density of states to explain the high hole densities observed in graphene and find the density responsivity to the gate voltage. By studying magneto-oscillations of the carrier density we provide an experimental way to determine the relevant model.