Carrier trapping and luminescence polarization in quantum dashes

TL;DR

This study investigates how polarization-dependent luminescence in quantum dashes varies with excitation power and temperature, linking polarization to light hole admixture and exciton localization within the nanostructures.

Contribution

The paper combines experimental measurements with theoretical modeling to elucidate the relationship between luminescence polarization and exciton state composition in quantum dashes.

Findings

Degree of polarization increases with excitation power.

Polarization behavior depends non-trivially on temperature.

Exciton ground state is localized in confinement fluctuations.

Abstract

We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a non-trivial way, depending on the excitation conditions. Using an approximate model based on the k.p theory, we are able to relate this degree of polarization to the amount of light hole admixture in the exciton states which, in turn, depends on the symmetry of the envelope wave function. Agreement between the measured properties and theory is reached under assumption that the ground exciton state in a quantum dash is trapped in a confinement fluctuation within the structure and thus localized in a much smaller volume of much lower asymmetry than the entire nanostructure.