First Principles Phase Diagram Calculations for the Octahedral-Interstitial System $HfO_{X}$, $0 \leq X \leq 1/2$
Benjamin P. Burton, Axel van de Walle

TL;DR
This study uses first principles calculations and cluster expansion to predict the phase diagram of HfO$_X$ with ordered ground states and complex temperature-dependent ordering phenomena.
Contribution
It introduces a comprehensive phase diagram prediction for HfO$_X$ using first principles and cluster expansion, revealing multiple ordered states and a disproportionation at low temperature.
Findings
Four ordered ground states predicted in the composition range.
Disproportionation at approximately 220K for X=5/12.
Devil's Staircases observed at X≈1/3 and X≈1/2.
Abstract
First principles based phase diagram calculations were performed for the hexagonal closest packed octahedral-interstitial solid solution system \alpha Hf[ ]_{1-X}O_{X}0 \leq X \leq 1/20 \leq X \leq 1/2\approx 220K\approx 1/3 () and XHf_{2}O$), order-parameter vs temperature plots predict Devil's Staircases of closely related ordered structures.
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Taxonomy
TopicsSemiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Inorganic Chemistry and Materials
