Enhanced Gas-Flow-Induced Voltage in Graphene

TL;DR

This study demonstrates that monolayer graphene produces significantly higher gas-flow-induced voltage than bulk graphite, with potential applications in flow sensing and energy conversion, influenced by material quality and doping.

Contribution

It provides the first systematic experimental analysis of gas-flow-induced voltage in graphene, revealing its dependence on resistance, quality, and doping, and explaining the phenomenon through Bernoulli's principle and Seebeck effect.

Findings

Graphene's induced voltage exceeds that of bulk graphite by over twenty times.

Voltage increases with sheet resistance and doping level.

Induced voltage is substrate-independent and explained by Bernoulli's principle and Seebeck coefficient.

Abstract

We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {\Omega}/sq shows that the induced voltage increase with the resistance and can be further improved by controlling the quality and doping level of graphene. The induced voltage is nearly independent of the substrate materials and can be well explained by the interplay of Bernoulli's principle and the carrier density dependent Seebeck coefficient. The results demonstrate that graphene has great potential for flow sensors and energy conversion devices.