High efficiency switching using graphene based electron 'optics'
Redwan Sajjad, Avik Ghosh

TL;DR
This paper introduces a graphene-based electron 'optics' device that creates a gate-tunable transmission gap, enabling efficient switching by filtering electrons and overcoming traditional thermal limits.
Contribution
It presents a novel method to open a transmission gap in graphene PN junctions using an additional barrier, enabling electrostatic control of electron flow and sharp switching behavior.
Findings
Demonstrates gate-tunable transmission gap in graphene PN junctions.
Shows filtering of electrons causes a metal-insulator transition.
Achieves switching beyond the thermal limit of 60 mV/decade.
Abstract
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel way to directly open a gate-tunable transmission gap across graphene PN junctions (GPNJ) by introducing an additional barrier in the middle that replaces Klein tunneling with regular tunneling, allowing us to electrostatically modulate the current by several orders of magnitude. The gap arises by angularly sorting electrons by their longitudinal energy and filtering out the hottest, normally incident electrons with the tunnel barrier, and the rest through total internal reflection. Using analytical and atomistic numerical studies of quantum transport, we show that the complete filtering of all incident electrons causes the GPNJ to act as a novel…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
