Electric-field induced penetration of edge states at the interface between monolayer and bilayer graphene

TL;DR

This paper theoretically investigates how perpendicular electric fields influence edge state penetration at the interface of monolayer and bilayer graphene, revealing potential for switching device applications.

Contribution

It introduces a theoretical model showing electric-field induced edge state penetration at the monolayer-bilayer graphene interface, including discovery of new boundary states.

Findings

Edge states penetrate into monolayer region under electric field.

Edge states remain localized in bilayer region regardless of electric field.

A new type of boundary edge state is identified.

Abstract

The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to penetrate into the single-layer region when the perpendicular electric field is applied, while they are localized in the double-layer region without electric field. The edge states in another side of the interface are localized in the double-layer region independent of the electric field. This field-induced penetration of the edge states can be applied to switching devices. We also find a new type of the edge states at the boundary between single-layer and the double-layer graphene.