Landau levels in asymmetric graphene trilayers
J. M. Pereira Jr., S. H. R. Sena, F. M. Peeters, and G. A. Farias

TL;DR
This paper derives analytical expressions for Landau levels in asymmetric graphene trilayers, revealing how stacking order, layer asymmetry, and external voltages influence their magnetic field dependence.
Contribution
It provides the first analytical solutions for Landau levels in ABA and ABC stacked graphene trilayers considering asymmetry and external voltages.
Findings
Landau levels depend differently on magnetic field for ABA and ABC stacking.
Layer asymmetry and gate voltages significantly alter the Landau level spectrum.
Analytical expressions enable better understanding of electronic properties in graphene trilayers.
Abstract
The electronic spectrum of three coupled graphene layers (graphene trilayers) is investigated in the presence of an external magnetic field. We obtain analytical expressions for the Landau level spectrum for both the ABA and ABC - type of stacking, which exhibit very different dependence on the magnetic field. The effect of layer asymmetry and of external gate voltages can strongly influence the properties of the system.
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Quantum Information and Cryptography
