Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency

TL;DR

This paper presents a method to incorporate excitation-dependent bandstructure changes into InGaN LED models, improving understanding of efficiency variations with carrier density.

Contribution

It introduces a novel approach combining bandstructure calculations with a dynamical population model for more accurate LED efficiency predictions.

Findings

Bandstructure changes significantly with carrier density due to screening effects.

The model accurately predicts internal quantum efficiency variations.

Method enhances LED design by accounting for excitation-dependent properties.

Abstract

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.