Silicon spin communication

TL;DR

This paper proposes a silicon-based on-chip communication method utilizing electron spin polarization modulation, supported by models of spin relaxation and drift-diffusion, enabling reliable long-distance spin transfer for integrated circuits.

Contribution

It introduces a novel spin communication paradigm in silicon, with quantitative analysis of its efficiency based on spin relaxation and drift-diffusion models.

Findings

Spin polarization can be reliably injected and detected in silicon.

Long-distance spin transfer exceeding 1 mm is feasible.

Figures of merit for the proposed scheme are provided.

Abstract

Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.