Band spectrum transformation and temperature dependences of thermoelectric power of Hg$_{1-x}$R$_x$Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ system

TL;DR

This study investigates how the electronic band structure and thermoelectric power of Hg-based high-temperature superconductors vary with temperature and composition, revealing a correlation between bandwidth and critical temperature.

Contribution

It introduces an analysis of the band spectrum transformation and temperature dependence of thermoelectric power in Hg-based cuprates, considering strong charge carrier scattering.

Findings

Correlation between effective bandwidth and T_c established

Band parameters transform with temperature and composition

Strong scattering effects significantly influence thermoelectric properties

Abstract

Temperature dependences of thermoelectric power S(T) at $T>T_c$ of the Hg-based high temperature superconductors Hg$_{1-x}$R$_x$Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ (R=Re, Pb) have been analyzed with accounting for strong scattering of charge carriers. Transformation of parameters of a narrow conducting band in the region of the Fermi level was studied. The existence of correlation between the effective bandwidth and the temperature of a superconductive transition $T_c$ is shown.