Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment

TL;DR

This paper demonstrates that on-chip RC filtering and high-ohmic resistors significantly suppress random switching in a superconductor-normal metal single-electron trap, enhancing its stability for potential current standard applications.

Contribution

It introduces the use of on-chip RC filtering and high-ohmic resistors to improve the stability of S-N single-electron traps, a novel approach for this device.

Findings

High-ohmic resistor increased trap hold time by up to 100 times

On-chip noise filtering significantly reduced random switchings

Results are promising for developing a current standard based on S-N devices

Abstract

Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local high-ohmic resistor increased the hold time of the trap by up to two orders of magnitude. A strong effect of on-chip noise filtering was observed for different on-chip geometries. The obtained results are promising for realization of the current standard on the basis of the S-N hybrid turnstile.