Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC

TL;DR

This study investigates the electronic properties of multilayer graphene on SiC, revealing that layer rotations make the films nearly freestanding electronically, with implications for graphene-based electronic devices.

Contribution

It provides a detailed comparison of the electronic band structure of graphene on the C-face of SiC with that on the Si-face, highlighting the effects of layer rotations and substrate influence.

Findings

Layer rotations lead to quasi-freestanding electronic behavior.

The band structure of C-face graphene differs from Si-face due to reduced substrate interaction.

Rotations between layers impact the electronic properties of multilayer graphene.

Abstract

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.