Stress-induced traps in multilayered structures

TL;DR

This study identifies and characterizes stress-induced traps in multilayered Si/CaF2 structures using optical charging spectroscopy, introducing a smoothing method and Gaussian model for better trap analysis.

Contribution

It presents a novel analysis method for stress-induced traps, including a smoothing technique and Gaussian modeling of trap parameters in multilayered structures.

Findings

Identification of stress-induced traps with sharp maxima

Development of an optimal smoothing procedure for noisy data

Characterization of both normal and stress-induced traps

Abstract

The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to "normal" traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture crosssections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features.