Observation of drift and diffusion processes in Ti/TiOx/Ti memristive devices prepared by local anodic oxidation

TL;DR

This study demonstrates a novel method to fabricate Ti/TiOx/Ti memristive devices using atomic force microscopy, revealing oxygen vacancy diffusion and drift, with implications for device retention and new material exploration.

Contribution

The paper introduces a tip-induced oxidation technique for memristor fabrication and provides direct evidence of oxygen vacancy diffusion and drift in TiOx barriers.

Findings

Memristive behavior confirmed in fabricated devices.

Oxygen vacancy diffusion observed with Kelvin probe microscopy.

Devices exhibit retention times of at least minutes.

Abstract

We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior and inferred diffusion of oxygen vacancies in the TiOx barrier. Consequent Kelvin probe force microscopy studies provided evidence for the diffusion, as well as for expected oxygen vacancy drift. Time evolution of the space distribution of the vacancies due to the diffusion process revealed minute-scale (at least) retention times of the devices. The work presents technology alternative for fabrication of memristive nanodevices in geometry favouring advantageous scanning probe microscopy studies of their in-barrier processes, as well as widely utilizable approach to search for novel oxide materials for perspective memristive applications.