Stacking-order dependent transport properties of trilayer graphene
S. H. Jhang, M. F. Craciun, S. Schmidmeier, S. Tokumitsu, S. Russo, M., Yamamoto, Y. Skourski, J. Wosnitza, S. Tarucha, J. Eroms, and C. Strunk
TL;DR
This study compares the transport properties of ABA- and ABC-stacked trilayer graphene, revealing how stacking order influences energy gaps and quantum Hall effects under electric and magnetic fields.
Contribution
It provides new experimental evidence showing how stacking order affects electronic properties and quantum Hall behavior in trilayer graphene.
Findings
Electric field opens a gap in ABC trilayer
Electric field increases band overlap in ABA trilayer
Distinct quantum Hall plateau sequences for ABA and ABC trilayers
Abstract
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of \nu = 2, 4, 6... with a step of \Delta \nu = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at \nu = 6 and 10 with 4-fold spin and valley degeneracy.
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