Simulation of ion-implanted boron redistribution under different conditions of the transient enhanced diffusion suppression

TL;DR

This paper uses impurity diffusion simulation to analyze how ion-implanted boron redistributes during annealing at 800°C or lower, focusing on the role of nonequilibrium impurity interstitials and their migration.

Contribution

It demonstrates that boron redistribution is dominated by long-range migration of impurity interstitials, regardless of transient enhanced diffusion suppression methods.

Findings

Long-range migration of impurity interstitials governs boron redistribution.

Time-averaged migration lengths of boron interstitials were determined.

The transfer of impurity atoms to interstitial positions was quantified.

Abstract

It has been shown by means of impurity diffusion simulation that ion-implanted boron redistribution at the annealing temperatures 800^{\circ}C and lower is governed by the long-range migration of nonequilibrium impurity interstitials regardless of the methods used for the transient enhanced diffusion suppression. The relative amounts of impurity atoms, which are being transferred to the transient interstitial position, have been determined and time-average migration lengths of nonequilibrium boron interstitials have been obtained.