Defect states and disorder in charge transport in semiconductor nanowires

TL;DR

This paper investigates how disorder affects charge transport in InP nanowires, revealing a new regime under positive gate voltage that challenges existing models and guides future device design.

Contribution

It uncovers a previously unexplored charge transport regime in nanowires under positive gate voltage, extending understanding beyond current theories.

Findings

Transport at zero gate voltage follows space charge limited current and Efros-Shklovskii hopping.

Positive gate voltage reveals a new transport regime not explained by existing models.

Continuous tuning between regimes informs future nanoscale device design.

Abstract

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.