Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

TL;DR

This paper investigates the theoretical performance limits of monolayer transition metal dichalcogenide transistors using a ballistic model and ab-initio calculations, highlighting their potential advantages over silicon in nanoelectronics.

Contribution

It provides a first-principles analysis of the band structures and performance limits of monolayer MX2 transistors, demonstrating their promising capabilities for future electronic devices.

Findings

Monolayer MX2 lattice structures are similar to bulk MX2.

Monolayer MX2 transistors outperform silicon transistors with high-κ gate insulators.

Performance is analyzed within a ballistic MOSFET model.

Abstract

The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared to the silicon transistors if thin high-{\kappa} gate insulator is used. This makes monolayer MX2 promising 2D materials for future nanoelectronic device applications.