Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect
M. Petrushevsky, E. Lahoud, A. Ron, E. Maniv, I. Diamant, I. Neder, S., Wiedmann, V. K. Guduru, F. Chiappini, U. Zeitler, J. C. Maan, K. Chashka, A., Kanigel, Y. Dagan
TL;DR
This study investigates the surface states of Bi2Se3 using Shubnikov-de Haas oscillations, revealing their properties and behavior, and comparing findings with ARPES data, while exploring the Berry phase's magnetic field dependence.
Contribution
It provides detailed characterization of Bi2Se3 surface states via SdH oscillations and highlights discrepancies in Berry phase behavior not explained by existing theories.
Findings
SdH oscillations reveal surface state properties
Fermi momentum matches ARPES measurements
Berry phase behavior deviates from theoretical expectations
Abstract
Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior.
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