Electrical power dissipation in carbon nanotubes on single crystal quartz and amorphous SiO2

TL;DR

This study investigates heat dissipation in semiconducting carbon nanotubes on quartz and SiO2, revealing similar average heat dissipation despite material differences, with complex temperature profiles and hot spots observed.

Contribution

It provides the first detailed spatially resolved Raman spectroscopy analysis of heat dissipation in CNTs on different substrates, highlighting the complexity of temperature profiles.

Findings

Heat dissipation into quartz and SiO2 is similar on average.

Large temperature gradients and hot spots are common in CNTs.

Material differences do not significantly affect overall heat dissipation.

Abstract

Heat dissipation in electrically biased semiconducting carbon nanotubes (CNTs) on single crystal quartz and amorphous SiO2 is examined with temperature profiles obtained by spatially resolved Raman spectroscopy. Despite the differences in phonon velocities, thermal conductivity and van der Waals interactions with CNTs, on average, heat dissipation into single crystal quartz and amorphous SiO2 is found to be similar. Large temperature gradients and local hot spots often observed underscore the complexity of CNT temperature profiles and may be accountable for the similarities observed.