Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

TL;DR

This paper investigates how boron atoms move in silicon during thermal treatments, especially under conditions that suppress transient enhanced diffusion, revealing the role of interstitial migration up to high temperatures.

Contribution

It provides new insights into the transport mechanisms of boron in silicon during thermal processing with TED suppression, highlighting the significance of interstitial migration.

Findings

Boron transport occurs up to 850°C due to interstitial migration.

Suppression of transient enhanced diffusion affects impurity atom movement.

Migration of nonequilibrium boron interstitials is significant in the process.

Abstract

It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^{\circ}C due to migration of the nonequilibrium boron interstitials.