Electric field compensation and sensing with a single ion in a planar trap
Sankaranarayanan Selvarajan, Nikos Daniilidis, S\"onke M\"oller, Rob, Clark, Frank Ziesel, Kilian Singer, Ferdinand Schmidt-Kaler, Hartmut, H\"affner

TL;DR
This paper demonstrates the use of a single ion in a planar trap as a precise electric field sensor, achieving compensation of stray fields and long-term stability in measurements.
Contribution
It introduces a method for electric field compensation and characterization using a single ion in a planar RF trap, with insights into stray charge buildup and stability over months.
Findings
Achieved electric field sensing accuracy of a few V/m.
Identified stray charge buildup causing fields up to 1.3 kV/m.
Demonstrated long-term stability of stray field profiles.
Abstract
We use a single ion as an movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar RF trap and characterize the static fields over an extended region along the trap axis. We observe a strong buildup of stray charges around the loading region on the trap resulting in an electric field of up to 1.3 kV/m at the ion position. We also find that the profile of the stray field remains constant over a time span of a few months.
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Taxonomy
TopicsCold Atom Physics and Bose-Einstein Condensates · Advanced Frequency and Time Standards · Atomic and Subatomic Physics Research
