Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD

TL;DR

This paper models the optical and electrical properties of AlGaAs lasers with separate confinement heterostructures using Sentaurus TCAD, demonstrating that doping optimization can significantly improve laser efficiency.

Contribution

It introduces a modeling approach combining Sentaurus TCAD and open source data analysis to optimize doping in AlGaAs lasers for enhanced performance.

Findings

Optical efficiency increased to over 70% with doping control

Model results align well with real laser data

Doping significantly impacts laser performance

Abstract

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD and open source software for semi-automatic data analysis of large collections of data. The effects of doping in all laser layers are investigated with the aim to achieve optimal characteristics of the devise. The results are compared with these obtained for real lasers produced at Polyus research institute in Moscow, showing that a significant improvement can be achieved, in particular an increase in optical efficiency (up to over 70 %) by careful control of type and level of doping through out the entire structure.