Topological Insulator Cell for Memory and Magnetic Sensor Applications

TL;DR

This paper introduces a memory device utilizing magnetically doped 3D topological insulators, leveraging the quantized Hall effect for robust, disorder-insensitive data readout suitable for memory and magnetic sensor applications.

Contribution

It presents a novel memory device design based on topological insulators that offers robust readout unaffected by disorder or imperfections.

Findings

Readout via quantized Hall effect is robust against disorder.

Device demonstrates potential for stable memory and magnetic sensing.

Topological properties enable insensitivity to device imperfections.

Abstract

We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process.