Modeling of ion-implanted atoms diffusion during the epitaxial growth of the layer

TL;DR

This paper develops an analytical model for impurity atom diffusion during epitaxial layer growth, considering defect interactions, stress fields, and nonuniform defect distributions, specifically for low fluence ion implantation.

Contribution

It introduces a new analytical solution for impurity diffusion that accounts for defect dynamics and stress effects during epitaxial growth.

Findings

Analytical solution for impurity diffusion during epitaxial growth.

Incorporates effects of defect migration and elastic stresses.

Applicable to low fluence ion implantation scenarios.

Abstract

The equation of impurity diffusion due to formation, migration, and dissolution of the pairs "impurity atom - intrinsic point defect" taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in the field of elastic stresses is presented in the coordinate system associated with the moving surface of the growing epitaxial layer. The analytical solution of this equation for the low fluence ion implantation has been obtained.